december 2008 FDS8882 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDS8882 rev.c www.fairchildsemi.com 1 FDS8882 n-channel powertrench ? mosfet 30 v, 9 a, 20.0 m ? features ? max r ds(on) = 20.0 m ? at v gs = 10 v, i d = 9 a ? max r ds(on) = 22.5 m ? at v gs = 4.5 v, i d = 8 a ? high performance trench tech nology for extremely low r ds(on) and fast switching ? high power and current handling capability ? termination is lead-free and rohs compliant general description the FDS8882 has been designed to minimize losses in power conversion application. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance. applications ? notebook system regulators ? dc/dc converters so-8 d d d d s s s g pin 1 g s s s d d d d 5 6 7 8 3 2 1 4 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous 9 a -pulsed 21 e as single pulse avalanche energy (note 3) 32 mj p d power dissipation t a = 25 c (note 1a) 2.5 w power dissipation t a = 25 c (note 1b) 1.0 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 25 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDS8882 FDS8882 so8 13 ? 12 mm 2500 units
FDS8882 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDS8882 rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 4 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.0 1.7 3.0 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -6 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 9 a 13.2 20.0 m ? v gs = 4.5 v, i d = 8 a 16.6 22.5 v gs = 10 v, i d = 9 a, t j =125 c 18.5 28.0 g fs forward transconductance v ds = 5 v, i d = 9 a 36 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 707 940 pf c oss output capacitance 138 185 pf c rss reverse transfer capacitance 88 135 pf r g gate resistance 1.8 ? t d(on) turn-on delay time v dd = 15 v, i d = 9 a, v gs = 10 v, r gen = 6 ? 714ns t r rise time 310ns t d(off) turn-off delay time 19 35 ns t f fall time 410ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 9 a 14 20 nc q g total gate charge v gs = 0 v to 5 v 8 11 nc q gs gate to source charge 2.2 nc q gd gate to drain ?miller? charge 2.8 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 9 a 0.8 1.2 v v gs = 0 v, i s = 2.1 a 0.7 1.2 t rr reverse recovery time i f = 9 a, di/dt = 100 a/ s 17 31 ns q rr reverse recovery charge 6 12 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 c, l = 1 mh, i as = 8 a, v dd = 27 v, v gs = 10 v. a) 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b) 125 c/w when mounted on a minimum pad.
FDS8882 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDS8882 rev.c www.fairchildsemi.com 3 typical characteristics t j = 25 c unless otherwise noted figure 1. 0 0.5 1.0 1.5 2.0 0 3 6 9 12 15 18 21 v gs = 3 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 6 v v gs = 3.5 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 036912151821 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 6 v v gs = 3 v v gs = 3.5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 9 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 10 20 30 40 50 i d = 9 a t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 01234 0 3 6 9 12 15 18 21 v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 30 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDS8882 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDS8882 rev.c www.fairchildsemi.com 4 figure 7. 0 3 6 9 12 15 0 2 4 6 8 10 q g , gate charge (nc) v gs , gate to source voltage (v) i d = 9 a v dd = 15 v v dd = 10 v v dd = 20 v gate charge characteristics figure 8. 0.1 1 10 30 20 100 1000 2000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1 10 t j = 100 o c t j = 125 o c t j = 25 o c t av , time in avalanche (ms) i as , avalanche current (a) 20 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 2 4 6 8 10 r t ja = 50 o c/w v gs = 4.5 v v gs = 10 v i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1 s 100 us 10 ms dc 10 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.1 1 10 100 1000 single pulse r t ja = 125 o c/w t a = 25 o c v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
FDS8882 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDS8882 rev.c www.fairchildsemi.com 5 figure 13. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.001 0.01 0.1 1 2 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 ntes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25 c unless otherwise noted
?2008 fairchild semiconductor corporation FDS8882 rev.c www.fairchildsemi.com 6 FDS8882 n-channel powertrench ? mosfet rev. i37 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. farichild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts expe rience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. farichild strongly encourages customers to purchase farichild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on ou r web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to farichild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. farichild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? 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